PART |
Description |
Maker |
GS71216TP GS71216TP-10 GS71216TP-10I GS71216TP-8 G |
10ns 64K x 16 1Mb asynchronous SRAM 8ns 64K x 16 1Mb asynchronous SRAM
|
GSI[GSI Technology]
|
N01L63W3A |
1Mb Ultra-Low Power Asynchronous CMOS SRAM 64K x 16 bit
|
ON Semiconductor
|
CY7C466A-10PTC CY7C464A-10PTC CY7C462A-15JC CY7C46 |
Asynchronous/ Cascadable 8K/16K/32K/64K x9 FIFOs Asynchronous, Cascadable 8K/16K/32K/64K x9 FIFOs 64K X 9 OTHER FIFO, 10 ns, PDIP28
|
CYPRESS[Cypress Semiconductor] Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
IDT70V658S15BC IDT70V658S15BCI IDT70V658S15BF IDT7 |
From old datasheet system Dual N-Channel Digital FET 30V N-Channel PowerTrench MOSFET HIGH-SPEED 3.3V 64K X 36 ASYNCHRONOUS DUAL-PORT STATIC RAM 64K X 36 DUAL-PORT SRAM, 12 ns, PQFP208 HIGH-SPEED 3.3V 64K X 36 ASYNCHRONOUS DUAL-PORT STATIC RAM 64K X 36 DUAL-PORT SRAM, 10 ns, PQFP208
|
IDT[Integrated Device Technology] Integrated Device Technology, Inc.
|
N01L6183AB27I N01L6183AB27IT N01L6183AT27I N01L618 |
1Mb Ultra-Low Power Asynchronous CMOS SRAM
|
ON Semiconductor
|
MT58L64L18F MT58L32L32F MT58L32L36F |
32K x 323.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V输入/输出,流通式同步脉冲静态RAM) 32K x 363.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V输入/输出,流通式同步脉冲静态RAM) 64K x 18, 3.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V输入/输出,流通式同步脉冲静态RAM) 64K的18.3V的I / O的流量通过SyncBurst的SRAM兆,3.3V的输输出,流通式同步脉冲静态内存)
|
Micron Technology, Inc.
|
N01L163WC2A |
1Mb Ultra-Low Power Asynchronous CMOS SRAM 64Kx16 bit
|
NanoAmp Solutions
|
IS61WV6416EEBLL |
64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
|
Integrated Silicon Solution, Inc
|
MCM67A618B MCM67A618BFN10 MCM67A618BFN12 MCM67A618 |
64K x 18 Bit Asynchronous/ Latched Address Fast Static RAM
|
MOTOROLA[Motorola, Inc]
|
AS7C1026A-10JC AS7C1026A-15JI AS7C31026A-10TI AS7C |
5V 64K x 16 CM0S SRAM , 12ns access time 5V/3.3V 64K X 16 CMOS SRAM 5V 64K x 16 CM0S SRAM , 10ns access time 3.3V 64K x 16 CM0S SRAM , 12ns access time
|
Alliance Semiconductor ... ALSC[Alliance Semiconductor Corporation]
|
MT58L32L32P MT58L32L36P MT58L64L18P |
32K x 32, 3.3V I/O, Pipelined, SCD SyncBurst SRAM(1Mb,3.3V输入/输出,流水线式,单循环取消选择,同步脉冲静态存储器) 32K x 36, 3.3V I/O, Pipelined, SCD SyncBurst SRAM(1Mb,3.3V输入/输出,流水线式,单循环取消选择,同步脉冲静态存储器) 64K x 18, 3.3V I/O, Pipelined, SCD SyncBurst SRAM(1Mb,3.3V输入/输出,流水线式,单循环取消选择,同步脉冲静态存储器) 64K的18.3V的I / O的流水线,SCD的SyncBurst的SRAM兆,3.3V的输输出,流水线式,单循环取消选择,同步脉冲静态存储器
|
Micron Technology, Inc.
|